Silicon package with integral heater

ABSTRACT

A hermetic package for electronic components which is made of metallic silicon is disclosed. The package includes a plurality of silicon elements which are bonded together. A metallic layer of platinum or gold is bonded to an internal surface of the hermetically sealed enclosure. While either metallic layer may serve as a heating element by subjecting the electronic circuit connected thereto with a large current, the platinum layer can also be used as a thermal sensor by passing a lower current there through. An internal heater is included to stabilize the performance of the electronic components.

The present invention is a continuation-in-part of U.S. patentapplication Ser. No. 10/931,663 filed Sep. 1, 2004 now U.S. Pat. No.7,061,086.

BACKGROUND AND SUMMARY OF THE INVENTION

The present invention is directed to the field of electronic devices,such as piezoelectric devices. The term “piezoelectric device” includesresonators, filters and surface acoustic wave devices. Moreparticularly, the present invention is directed to a hermetic siliconpackage for such devices and a method of making a surface mountableelectronic component utilizing such a package.

For over 50 years, the assignee of this patent application has providedpiezoelectric devices such as quartz resonators, packaged in a glasshousing, for use in aerospace applications. For this particularapplication, it is important that the piezoelectric device be housed ina vacuum chamber to prevent contamination of the quartz crystal sincecontaminants can cause deterioration of the accuracy of the resonator.While this deterioration is slow and typically involves changes inaccuracy in the parts per billion per day range, for aerospaceapplications where precision accuracy is essential and the resonatorneeds to operate for 10–50 years on some exploratory missions, anydeterioration is detrimental to the function of the resonator and,hence, to the space craft.

With the advent of solid state electronic circuitry, the number ofcompanies manufacturing glass tubes or “bubbles” (of the type previouslyused for electronic vacuum tubes) has continued to dwindle, commensuratewith the demand for their products. For some applications, the glassbubble can be replaced by a copper housing. However, for aerospaceenvironment where the piezoelectric device may be exposed totemperatures exceeding 300° C., copper packages are subject to collapseas the metal reaches a softening point and the internal vacuum may drawcontaminants into the cavity. This permits the piezoelectric devicehoused therein to be subject to whatever contaminants may be containedin the ambient environment, leading to degradation of its properties.

Within the past fifteen years, Sandia National Laboratory has performedsome work on a silicon package which may be useful in housingpiezoelectric elements for certain applications. This silicon package istaught in U.S. Pat. Nos. 5,198,716 and 5,339,051. Although these patentsproduce some of the benefits associated with silicon for housing anelectronic component, the package taught therein is wholly inadequatefor use in aerospace and related applications. A low temperature bondingtechnique is employed. When subjected to the rigorous environment ofouter space, the bond will melt (fail) leading to unacceptabledegradation of the performance of the electronic package. Further, theproposed device involves silicon-quartz-silicon bonding, a difficultproposition at best, given the dissimilarity of the materials, made allthe more risky by doubling the extent of circumferential area subject tofailure by doubling the number of bonds needed. For many applications,this bond failure may not significantly impact the performance of thehoused components but, as has been noted, in the demanding environmentof aerospace, even the slightest degradation must be resisted asintolerable.

It is, therefore, the intent of this invention to provide a siliconpackage which can replace the glass bubble and provide the electroniccomponents housed therein a hermetic environment which will perpetuateinitial performance, or as close to initial performance as possible, forthe duration of the life of the component. Another aspect of theinvention is a method of manufacturing a surface mountable electroniccomponent which is capable of such enduring peak performance.

The present invention comprises a hermetic package for enclosing apiezoelectric device comprising a base member made of a single crystalof metallic silicon; a cover made of a single crystal of metallicsilicon; a cavity formed between the base member and the cover forreceiving the piezoelectric device, the cavity providing a vacuumenvironment for the piezoelectric device; high temperature bonding meansfor securing the cover means directly to the base member. The vacuumpreferably falls in the range between 1×10⁻⁵ and 1×10⁻¹¹ torr, while thehigh temperature bonding means is preferably is performed in atemperature range of 300° C. and 800° C. While the piezoelectric devicemay be selected from the group of resonators, filters and surfaceacoustic wave devices, for aerospace and similar applications, it ispreferably an ultra-stable oscillator and, most preferably, a quartzcrystal. In the ultra-stable oscillator, the quartz crystal will beprovided with first and second gold plated electrodes spaced fromopposing surfaces thereof.

The cavity in the package is preferably formed as a recess in at leastone of the base member and the cover to provide a place to house theelectronic element. Most preferably, the cavity comprises a recessformed in each of the base member and the cover and may be augmented bythe addition of a spacer ring. The preferred high temperature bondingmeans comprises brazing of the cover to the base member using goldindium eutectic alloy at 495° C. This same bonding means is preferablyused to secure the piezoelectric device to at least a portion of saidcavity. It is a feature of the present invention that the base memberand the cover provide means of electrical contact to the piezoelectricdevice obviating need for lead wires within the package. This isparticularly important in the aerospace applications where sealing iscrucial and the absence of lead wires eliminates the possibility thatthe wires can adversely affect the hermetic characteristics of thedevice.

Another aspect of the present invention involves a hermetic package foran electronic component comprising a base member made of a materialselected from the group consisting of metallic silicon, titanium,zirconia, silicon carbide, sapphire, and tantalum; a cover made of thesame material as the base member; a cavity formed between the basemember and the cover for receiving the electronic component, the cavityproviding a vacuum environment for the electronic component; hightemperature bonding means for securing the cover means directly to thebase member. The vacuum has the same preferred characteristics as thefirst embodiment, namely, the vacuum falls in the range between 1×10⁻⁵and 1×10⁻¹¹ torr. Similarly, the high temperature bonding means isperformed in a temperature range of 300° C. and 800° C., as with theprevious embodiment.

Another aspect of the present invention is a method of making a surfacemountable electronic component comprising the steps of providing a basemember made of a material selected from a group consisting or metallicsilicon, titanium, zirconia, silicon carbide, sapphire, and tantalum;providing a cover member made of the same material as the base memberand defining a cavity between the base member and the cover large enoughto receive the electronic component; bonding the electronic component inthe cavity by a method selected from a group consisting of brazing thecomponent in the cavity using thermo-compression bonding at atemperature approaching 500° C., laser welding, E-beam welding, anodicbonding, induction heating; bonding the cover to the base member by amethod selected from a group consisting of brazing the component in thecavity using gold indium eutectic alloy at a temperature approaching500° C., laser welding, E-beam welding, anodic bonding, inductionheating, glass frit, or thermo-compression bonding.

The method also preferably includes the step of evacuating the cavity bypulling a vacuum thereon in a range of between 1×10⁻⁵ and 1×10⁻¹¹ torr.For some applications, the evacuation step is performed after bondingthrough a small hole in one of the base member and the cover. For otherapplications, the evacuation step is performed before the bonding step.

Another detrimental effect for these precision electronic components isvariations in temperature. It is a further aspect of the presentinvention to provide metallic layer bonded to an interior surface of theenclosure. The metallic layer will be selected from a group consistingof platinum and gold. Electric circuitry connects the metallic layer tocontrol means positioned outside the enclosure so as not to interferewith the hermetic nature thereof. Either of these metals can function asa heating element within the package to maintain a more uniform ambienttemperature. Platinum can function as both a heating element and athermal sensor to determine the temperature within the enclosure.

Various other features, advantages and characteristics of the presentinvention will become apparent to one of ordinary skill in the art aftera reading of the following specification.

BRIEF DESCRIPTION OF THE DRAWINGS

The preferred embodiment(s) of the present invention is/are described inconjunction with the associated drawings in which like features areindicated with like reference numerals and in which

FIG. 1 is an exploded side view in partial cross section of a firstembodiment of a surface mountable electronic component employing thesilicon package of the present invention;

FIG. 2A is a top view of the base member of the first embodiment of thesilicon package;

FIG. 2B is a bottom view of the cover of the first embodiment of thesilicon package;

FIG. 2C is a top view of the an exemplary piezoelectric device enclosedin the silicon package in the first embodiment;

FIG. 3A is a cross-sectional side view of a second embodiment of asurface mountable electronic component employing the silicon package ofthe present invention;

FIG. 3B is a top view of the base member of the second embodiment;

FIG. 4A is a top view of a third embodiment of the present inventionwith cradle 52″ removed;

FIG. 4B is a cross-sectional side view of the third embodiment;

FIG. 5A is a cross-sectional bottom view taken along line 5—5 in FIG.4B; and,

FIG. 5B is an inverted cross-sectional side view of the cover depictedin FIG. 4B.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENT(S)

A first embodiment of a surface mountable electronic component employingthe silicon package of the present invention is depicted in FIG. 1generally at 20. Surface mountable electronic component 20 includes abase member 22 manufactured from a single crystal of metallic silicon.Similarly, the cover 32 is manufactured from a single crystal ofmetallic silicon. Both base member 22 and cover 32 have a hollowed outregion 24, 34, respectively, to receive the piezoelectric device, inthis case a quartz crystal resonator 40. As seen in FIGS. 2A and 2B, thecentral portions 26 and 36 of base member 22 and cover 32 have a goldelectrode 28, 38, respectively, affixed thereto.

In this high performance, low-production-volume application, the basemember 22 is mounted atop a glass pedestal 11 with lower end 13 fastenedto a source of vacuum (not shown). Quartz crystal resonator 40 isattached to base member 22 by any of a variety of known high temperaturemethods performed in a temperature range from 300° C. and 800° C., abrazing technique using a gold indium eutectic alloy performed at atemperature of 495° C. being preferred. The same technique is thenemployed to attach silicon to silicon as cover 32 is attached to uppersurface of silicon spacer ring 25 whose lower surface is attached tobase member 22. Once assembly of the surface mountable electroniccomponent 20 is completed, the source of vacuum is activated andtypically maintained for periods exceeding one week to pull a vacuum inthe range of between 1×10⁻⁶ and 1×10⁻¹⁰ torr to remove all potentialpollutants from the cavity created by the hollowed out portions 24 and34. It will be understood that although the cavity has been shown asbeing created by a combination of hollowed out portions 24 and 34 andspacer ring 25, it would be possible to form base member 22 and covermember 32 as planar elements and assemble them with a thicker siliconspacer ring, or, alternatively, to create sufficient space in hollowedout portions 24, 34 depending on the specifics of the application,without departing from the scope of this invention. It will further beunderstood that should a technological advance be made in the area ofvacuum equipment where a vacuum of 1×10⁻¹ torr or less would bepossible, such a vacuum would also not depart from the scope of thisinvention.

Once the package 20 is hermetic to the degree desired, glass pedestal 11will be melted at a point just below base member 22. The softened glasswill be pulled into the opening by the vacuum in the internal cavity. Itwill be appreciated that if any minute amount of oxygen enter thehousing as the sealing takes place, it will react with the siliconforming the internal surface of hollowed out regions 24, 34 forming aglassy, less reactive surface. This further enhances the purity of thehermetic environment ensuring enhance performance of quartz crystalresonator 40.

In this embodiment, the metallic silicon of base member 22 and cover 32has been treated with a p-doping process during formation of the singlecrystals to make them conductive, whereas, spacer ring 25 isnon-conductive. Accordingly, either the base member 22 or the cover 32,or both, can be utilized to provide electrical connection to thepiezoelectric device and/or other electrical components housed withinthe hermetic package.

A second embodiment of the surface mountable electronic componentincluding a hermetic package is shown in FIG. 3A generally at 20′. Inthis embodiment, the base member 22′ and cover 32′ are assembled in avacuum chamber and, therefore, the assembly is performed after thecavity is evacuated. The electronic component 40′ is mounted usingnickel ribbons 42′ which have been gold plated, the nickel ribbons 42′being attached to the electronic component 40′ and the base member 22′using the brazing technique described in conjunction with the firstembodiment.

In the formation of the single crystal of metallic silicon forming basemember 22′ and cover 32′, the p-doping process renders the siliconnon-conductive. Accordingly, silver contact leads 44′ are positionedbetween the base member 22′ and the cover 32′ in contact with each ofthe nickel ribbons 42′ to permit electrical current to be fed to theelectronic component 40′.

While both the first and second embodiments have been described ashaving base members and covers made of single crystal silicon brazedusing gold indium eutectic alloy, it is contemplated that othermaterials could be used. For example, while silicon is the preferredmaterial, other materials including titanium, zirconia, silicon carbide,sapphire, and tantalum could be used. Similarly, while the brazingtechnique set forth herein is preferred method of affixing the twohalves of the package together as well as fixing the electroniccomponent in place, it is contemplated other bonding techniquesincluding laser welding, E-beam welding, anodic bonding, and inductionheating could be used. Finally, although the preferred electroniccomponent is an ultra-stable oscillator in the form of a quartz crystal,it is envisioned that other electronic components including a galliumorthophosphate crystal and a lithium niobate crystal, could be utilizedin this hermetic package.

A third embodiment is shown in FIGS. 4A and 4B generally at 20″. In thisembodiment, three single crystal metallic silicon elements 22″, 32″ and52″ are bonded together using the techniques described with respect tothe first and second embodiments. A metallic layer 50″ is bonded to thelower surface 33″ of cover 32″ within the hermetically sealed chamber55″. Material for metallic layer 50″ will be selected from a groupconsisting of gold and platinum. Both of these metals are suitable foruse as heaters for chamber 55″ by running a large current there through.An added benefit of a platinum metallic layer 50″ is that platinum candouble as a thermal sensor within chamber 55″ by subjecting it to alower amperage current. The serpentine path shown in FIG. 5A for heatingelement 50″ is merely exemplary; heating element 50″ may take any shapewhich a particular application requires. Cradle 52″ provides space formounting oscillator 59″ and electrical controls external to the hermeticchamber 55″.

The electronic component or device 57″ may be a piezoelectric componentsuch as a quartz crystal or may take another form. As shown in FIG. 4B,oscillator 59″ and associated electrical control elements are mountedexternal to the hermetically sealed chamber 55″ and electrical contacts56″ extend through element 52″ to make connection with silicon element32″. Ribbons 58″ are wrapped around to the upper surface of cover 32″(FIG. 4 a) with ribbons 58 a″ providing electrical connection forheating/sensing element 50″, ribbons 58 b″ providing electricalconnection for electrical device 57″ and the remaining ribbons 58″provided for another component which may be mounted within chamber 55″.

It will be understood that once a vacuum has been applied to chamber55″, for some applications, it may be beneficial to fill chamber 55″with helium, hydrogen, nitrogen or an inert gas. The presence of the gascan facilitate the heating of the elements within the chamber to auniform temperature.

Various other changes, alternatives and modifications will becomeapparent to one of ordinary skill in the art following a reading of theforegoing specification. It is intended that any such changes,alternatives and modifications as fall within the scope of the appendedclaims be considered part of the present invention.

1. A hermetically packaged electronic device comprising a) an enclosureof metallic silicon made of a plurality of elements including an upperelement and a lower element, said enclosure maintaining a vacuum in arange between 1×10⁻⁶ and 1×10⁻¹¹ torr; b) means bonding said pluralityof elements together, said bonding means securing a first siliconelement directly to a second silicon element; c) a piezoelectric devicecontained within said enclosure; d) a metallic layer bonded to a lowersurface of said upper element, said metallic layer functioning as aheating element; e) control means positioned outside of said enclosure;f) electrical circuitry interconnected between said metallic layer andsaid control means.
 2. The device of claim 1 wherein said bonding meanscomprises thermo-compression bonding means performed at high temperaturefor securing said plurality of elements of said enclosure directly toeach other.
 3. The device of claim 2 wherein said plurality of elementsinclude a base member and a cover configured to fit thereon.
 4. Thepackage of claim 3 wherein said base member and said cover directlyprovide means of electrical contact to said piezoelectric deviceobviating need for leads and wires within and protruding from saidpackage.
 5. The device of claim 3 wherein said base member and saidcover are each comprised of single metallic silicon crystals.
 6. Thedevice of claim 3 wherein said heating element comprises a non-venting,electrically conductive element bonded to a nether surface of saidcover.
 7. The device of claim 6 further comprising thermo-compressionbonding means between said heating element and said cover, the samebonding means used to secure said plurality of enclosure elementstogether.
 8. The device of claim 6 wherein said heating element is madefrom the group consisting of platinum and gold.
 9. The device of claim 8wherein said heating element is made from platinum and also serves assaid temperature sensing means.
 10. The package of claim 2 wherein saidthermo-compression bonding means is performed in a temperature range ofbetween 300° C. and 800° C.
 11. The device of claim 10 wherein saidthermo-compression bonding means comprises brazing of said cover to saidbase member using gold indium eutectic alloy at 495° C.
 12. The deviceof claim 1 wherein said piezoelectric device is an ultra-stableoscillator.
 13. The device of claim 12 wherein said ultra-stableoscillator comprises a quartz crystal.
 14. The device of claim 13wherein said ultra-stable oscillator further comprises first and secondgold plated electrodes spaced from opposing surfaces of said quartzcrystal.
 15. The device of claim 1 wherein said metallic layer isselected from the group consisting of platinum and gold.
 16. The deviceof claim 15 wherein said metallic layer is platinum.
 17. The device ofclaim 16 wherein said metallic layer serves as both a heating elementand a thermal sensor.
 18. The device of claim 15 wherein said metalliclayer serves as a heating element to control the temperature within saidenclosure.